Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.3494/fulltext
Reference21 articles.
1. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy
2. Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy
3. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
4. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
5. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
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