Ab initiomolecular-orbital study on successive hydrogen-elimination reactions with low activation energies in thea-Si:H formation process: Cluster-size dependence of activation energies
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2675/fulltext
Reference9 articles.
1. Investigation of the growth kinetics of glow‐discharge hydrogenated amorphous silicon using a radical separation technique
2. Successive hydrogen-elimination reactions with low activation energies in thea-Si:H formation process: Anab initiomolecular-orbital study
3. Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon
4. Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon
5. Multiple-Quantum NMR Study of Clustering in Hydrogenated Amorphous Silicon
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2. Ab InitioMolecular Orbital Study on Acceleration Mechanism of Silane Plasma Chemical Vapor Deposition by Diborane;Applied Physics Express;2011-04-25
3. Ab initio Molecular Orbital Study on Hydrogen Radical Addition Reactions to Graphite Surface and Subsequent Initial Surface Process in Silane Plasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-12-10
4. STUDIES OF SUPERDENSE HADRONIC MATTER IN A RELATIVISTIC TRANSPORT MODEL;International Journal of Modern Physics E;2001-08
5. Hydrogen elimination model of the formation of hydrogen bonding structures during the growth of hydrogenated amorphous silicon by plasma CVD;Physical Review B;2000-12-15
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