Successive hydrogen-elimination reactions with low activation energies in thea-Si:H formation process: Anab initiomolecular-orbital study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1913/fulltext
Reference12 articles.
1. Measurement of the SiH3Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy
2. Investigation of the growth kinetics of glow‐discharge hydrogenated amorphous silicon using a radical separation technique
3. Thermal decomposition of silane
4. Potential primary pyrolysis processes for disilane
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1. Ab InitioMolecular Orbital Study on Acceleration Mechanism of Silane Plasma Chemical Vapor Deposition by Diborane;Applied Physics Express;2011-04-25
2. Ab initio Molecular Orbital Study on Hydrogen Radical Addition Reactions to Graphite Surface and Subsequent Initial Surface Process in Silane Plasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-12-10
3. Hydrogen elimination model of the formation of hydrogen bonding structures during the growth of hydrogenated amorphous silicon by plasma CVD;Physical Review B;2000-12-15
4. Substrate Temperature Dependence of the Surface Reaction Mechanism of Methane Plasma Chemical Vapor Depositon: Experimental and Ab Initio Molecular Orbital Study;Japanese Journal of Applied Physics;2000-05-15
5. Plasma-chemical vapor deposition of wide band gap a-SiC:H films: An ab initio molecular-orbital study;Journal of Applied Physics;2000-04-15
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