Ab InitioMolecular Orbital Study on Acceleration Mechanism of Silane Plasma Chemical Vapor Deposition by Diborane
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=5/a=056202/pdf
Reference15 articles.
1. Substitutional doping of amorphous silicon
2. Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane
3. Successive hydrogen-elimination reactions with low activation energies in thea-Si:H formation process: Anab initiomolecular-orbital study
4. Ab initiomolecular-orbital study on successive hydrogen-elimination reactions with low activation energies in thea-Si:H formation process: Cluster-size dependence of activation energies
5. An ab initio molecular-orbital study on hydrogen-abstraction reactions at the growing surface of hydrogenated amorphous silicon
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1. Interfaces between crystalline Si and amorphous B: Interfacial interactions and charge barriers;Physical Review B;2021-02-09
2. Stability, local structure and electronic properties of borane radicals on the Si(1 0 0) 2 × 1:H surface: A first-principles study;Computational Materials Science;2017-12
3. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition;Journal of Applied Physics;2015-05-28
4. BH2revisited: New, extensive measurements of laser-induced fluorescence transitions andab initiocalculations of near-spectroscopic accuracy;The Journal of Chemical Physics;2015-05-07
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