An ab initio molecular-orbital study on hydrogen-abstraction reactions at the growing surface of hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368087
Reference26 articles.
1. Origin of emitting species in the plasma deposition of a‐Si:H alloys
2. High resolution absorption and emission spectroscopy of a silane plasma in the 1800–2300 cm−1 range
3. Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous silicon
4. Spatial concentrations of silicon atoms by laser‐induced fluorescence in a silane glow discharge
5. Production mechanism and reactivity of the SiH radical in a silane plasma
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1. Ab InitioMolecular Orbital Study on Acceleration Mechanism of Silane Plasma Chemical Vapor Deposition by Diborane;Applied Physics Express;2011-04-25
2. Ab initio study of the reactions of Ga(2P, 2S, and 2P) with silane;The Journal of Chemical Physics;2004-09-22
3. Ab initio Molecular Orbital Study on Hydrogen Radical Addition Reactions to Graphite Surface and Subsequent Initial Surface Process in Silane Plasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-12-10
4. Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface;The Journal of Chemical Physics;2002-12-15
5. Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon;Journal of Physics and Chemistry of Solids;2002-09
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