Scaling behavior in InAs/GaAs(001) quantum-dot formation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.201302/fulltext
Reference21 articles.
1. Origin of Self-Assembled Quantum Dots in Highly Mismatched Heteroepitaxy
2. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy
3. Self-assembled island formation in heteroepitaxial growth
4. Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate
5. Mean-Field Theory of Quantum Dot Formation
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1. Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots;Journal of Applied Physics;2022-06-21
2. Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A;Crystal Growth & Design;2021-02-12
3. Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV;2018-02-21
4. Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate;Scientific Reports;2017-02-13
5. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
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