Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A-Reference-Cited by-同舟云学术

Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A

Published:2021-02-12 Issue:3 Volume:21 Page:1674-1682
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Sautter Kathryn E.¹^ORCID,Schuck Christopher F.¹,Smith Justin C.²,Vallejo Kevin D.¹,Garrett Trent A.³,Soares Jake¹,Coleman Hunter J.³,Henry Michael M.¹^ORCID,Jankowski Eric¹^ORCID,Ratsch Christian²⁴,Simmonds Paul J.¹³^ORCID

Affiliation:

1. Micron School of Materials Science & Engineering, Boise State University, 1910 University Drive, Boise, Idaho 83725, United States

2. Department of Mathematics, University of California, Los Angeles, California 90095, United States

3. Department of Physics, Boise State University, 1910 University Drive, Boise, Idaho 83725, United States

4. Institute for Pure and Applied Mathematics, University of California, Los Angeles, California 90095, United States

Funder

Air Force Office of Scientific Research

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c01528

Reference54 articles.

1. Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B

2. Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

3. Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy

4. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

5. Controlled nucleation of monolayer MoSe2 islands on Si (111) by MBE

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1. Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays;Crystal Growth & Design;2023-10-27

2. Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots;ACS Nano;2023-01-17

3. Controlled growth mechanism of ring-like In(Ga)As quantum Dot pairs on GaAs ring-ring-disk nanostructures templates;Materials Research Express;2022-05-01