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Mean-Field Theory of Quantum Dot Formation

Published:1997-08-04 Issue:5 Volume:79 Page:897-900
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Dobbs Harvey T.,Vvedensky Dimitri D.,Zangwill Andrew,Johansson Jonas,Carlsson Niclas,Seifert Werner

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.897/fulltext

Reference25 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

4. Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy

5. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures

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3. Effects of In composition on the surface morphology of self-assembled In _x Ga_1−xSb/GaAs quantum dots;Japanese Journal of Applied Physics;2022-05-25

4. In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers;Revista Mexicana de Física;2022-04-06

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