Origin of the nitrogen-induced optical transitions inGaAs1−xNx
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.075207/fulltext
Reference24 articles.
1. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
2. Band structure of semiconductor alloys
3. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
4. Band Anticrossing in GaInNAs Alloys
5. Conduction-band-resonant nitrogen-induced levels inGaAs1−xNxwithx<0.03
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