Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x-Reference-Cited by-同舟云学术

Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

Published:2016-12-01 Issue:4 Volume:34 Page:881-885
ISSN:2083-134X
Container-title:Materials Science-Poland
language:en
Short-container-title:

Author:

Zhao Chuan-Zhen¹,Wei Tong²,Sun Xiao-Dong¹,Wang Sha-Sha¹,Lu Ke-Qing¹

Affiliation:

1. Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

2. College of Science, Civil Aviation University of China, Tianjin, 300300, China

Abstract

Abstract A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1–x. It is found that the sublinear pressure dependence of E− is due to the coupling interaction between E+ and E−. We have also found that GaNxAs1−x needs much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E−. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1−x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1−x is larger than that in GaAs. It is due to the impurity-host interaction.

Publisher

Walter de Gruyter GmbH

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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