Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y
Author:
Zhao Chuan-Zhen1, Ren He-Yu1, Sun Xiao-Dong1, Wang Sha-Sha1, Lu Ke-Qing1
Affiliation:
1. Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems , School of Electronics and Information Engineering, Tianjin Polytechnics University , Tianjin , 300387 , China
Abstract
Abstract
Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.
Publisher
Walter de Gruyter GmbH
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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