Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=12/a=121202/pdf
Reference21 articles.
1. GaAsSbN: a new low-bandgap material for GaAs substrates
2. Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3μm application
3. Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs
4. Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures
5. Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell
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