GaAsSbN: a new low-bandgap material for GaAs substrates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990864?crawler=true&mimetype=application/pdf
Reference8 articles.
1. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
2. 1-eV solar cells with GaInNAs active layer
3. Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP
4. MOVPE growth of strained InGaAsN/GaAs quantum wells
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