Annealing of dilute-nitride GaAsSbN∕InP strained multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2805637
Reference18 articles.
1. GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
2. Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm
3. Improved high temperature growth of GaInNAsSb by molecular beam epitaxy
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission
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1. Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y;Materials Science-Poland;2020-06-01
2. Pressure Dependence of Sb Level in Dilute Nitride and Antimony GaNxSbyAs1−x−y;Journal of Electronic Materials;2019-02-19
3. Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys;Journal of Electronic Materials;2018-05-30
4. A Model Describing the Band Gap Energy of the Strained In x Ga1−x N y Sb z As1−y−z Alloy (0 < x ≤ 0.5, 0 < y ≤ 0.05, 0 < z ≤ 0.1);Journal of Electronic Materials;2016-12-19
5. Composition dependence of the band gap energy for the dilute nitride and As-rich GaNxSbyAs1−x−y (0≤x≤0.05, 0≤y≤0.3);Physica B: Condensed Matter;2016-03
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