Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm-Reference-Cited by-同舟云学术

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Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

Published:2005 Issue:3 Volume:23 Page:1337
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Bank Seth R.,Wistey Mark A.,Yuen Homan B.,Goddard Lynford L.,Bae Hopil,Harris James S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy;Semiconductors;2023-07

2. Growth Advancement of GaAs-Based BGaInAs Alloys Emitting at 1.3 μm by Molecular Beam Epitaxy;Crystal Growth & Design;2022-05-09

3. As-Grown InGaAsN Subcells for Multijunction Solar Cells by Molecular Beam Epitaxy;IEEE Journal of Photovoltaics;2021-09

4. Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm;Semiconductors;2021-07

5. The effect of hard nitridation on Al2O3 using a radio frequency operated plasma cell;THIN SOLID FILMS;2011

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