Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission-Reference-Cited by-同舟云学术

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Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Published:2001-07 Issue: Volume:227-228 Page:553-557
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Harmand J.C,Ungaro G,Ramos J,Rao E.V.K,Saint-Girons G,Teissier R,Le Roux G,Largeau L,Patriarche G

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m

3. Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition

4. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m

5. 1.3-μm GaInNAs-AlGaAs distributed feedback lasers

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2. Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters;Journal of Nanotechnology;2022-04-13

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