Energy gap reduction in dilute nitride GaAsSbN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3009199
Reference19 articles.
1. GaNAsSb: how does it compare with other dilute III V-nitride alloys?
2. Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
3. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
4. Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3μm p-i-n photodetector
5. Band Anticrossing in GaInNAs Alloys
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