Sb/GaAs(110) interface: A reevaluation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.1328/fulltext
Reference17 articles.
1. Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction
2. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
3. LEED-AES-TDS characterization of Sb overlayers on GaAs(110)
4. Electron states of an Sb-ordered overlayer on GaAs(110)
5. Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and Bonding
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1. Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110);Physical Review B;2015-08-10
2. Electronic structure of indium-tin-oxide films fabricated by reactive electron-beam deposition;Physical Review B;2005-08-16
3. Photoemission studies of K-promoted oxidation of the GaAs(110) surface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03
4. Direct atomic structure determination by scanned-energy photoelectron diffraction: Sb/GaAs(110);Journal of Electron Spectroscopy and Related Phenomena;1999-06
5. Geometry and core-level shifts of As on GaAs(110);Physical Review B;1999-05-15
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