Electron states of an Sb-ordered overlayer on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.27.1251/fulltext
Reference20 articles.
1. Angular-resolved photoemission from GaAs(110) surfaces with adsorbed Al
2. Atomic Geometry of GaAs(110)-p(1×1)-Al
3. LEED intensity analysis of the structure of Al on GaAs(110)
4. First‐principles determination of the structure of the Al/GaAs(110) surface
5. Al on GaAs(110) interface: Possibility of adatom cluster formation
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2. Surface electronic properties by metastable deexcitation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-08
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4. Growth of Epitaxial Co Layers on Sb-Passivated GaAs(110) Substrates;Surface Review and Letters;1998-02
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