Geometry and core-level shifts of As on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.12200/fulltext
Reference20 articles.
1. Adsorption of group-V elements on III–V (1 1 0) surfaces
2. Structure of the GaAs(110) surface in As-rich conditions
3. Nonlinear excitation of capillary waves by the Marangoni motion induced with a modulated laser beam
4. Core level photoemission study of As interaction with InP(110) and GaAs(110)
5. Sb/GaAs(110) interface: A reevaluation
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1. Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces;Journal of Physics: Condensed Matter;2016-06-14
2. Calculation of surface core-level shifts within complete screening: Problems with pseudohydrogenated slabs;Physical Review B;2008-06-02
3. Surface core-level shifts ofGaAs(100)(2×4)from first principles;Physical Review B;2007-09-26
4. Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110);Journal of Physics: Condensed Matter;2004-09-21
5. Weakly correlated one-dimensional indium chains on Si(111);Physical Review B;2001-11-14
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