Surface core-level shifts ofGaAs(100)(2×4)from first principles-Reference-Cited by-同舟云学术

Surface core-level shifts ofGaAs(100)(2×4)from first principles

Published:2007-09-26 Issue:11 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Punkkinen M. P. J.,Laukkanen P.,Kokko K.,Ropo M.,Ahola-Tuomi M.,Väyrynen I. J.,Komsa H.-P.,Rantala T. T.,Pessa M.,Kuzmin M.,Vitos L.,Kollár J.,Johansson B.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.115334/fulltext

Reference53 articles.

1. Core-Level Binding Energy and Density of States from the Surface Atoms of Gold

2. Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)

3. Core-level binding-energy shifts for the metallic elements

4. Effect of the Madelung potential on surface core-level shifts in GaAs

5. Charge transfer from chemical shifts at (110) surfaces of III–V compound semiconductors

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