Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction-Reference-Cited by-同舟云学术

Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction

Published:2015 Issue:10 Volume:17 Page:7060-7066
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Tuominen Marjukka¹²³⁴,Yasir Muhammad¹²³⁴,Lång Jouko¹²³⁴,Dahl Johnny¹²³⁴,Kuzmin Mikhail¹²³⁴,Mäkelä Jaakko¹²³⁴,Punkkinen Marko¹²³⁴,Laukkanen Pekka¹²³⁴,Kokko Kalevi¹²³⁴,Schulte Karina⁵⁶⁷⁸,Punkkinen Risto⁹²³⁴,Korpijärvi Ville-Markus¹⁰¹¹¹²⁴,Polojärvi Ville¹⁰¹¹¹²⁴,Guina Mircea¹⁰¹¹¹²⁴

Affiliation:

1. Department of Physics and Astronomy

2. University of Turku

3. FI-20014 Turku

4. Finland

5. MAX IV Laboratory

6. Lund University

7. SE-221 00 Lund

8. Sweden

9. Department of Information Technology

10. Optoelectronics Research Centre

11. Tampere University of Technology

12. FI-33101 Tampere

Abstract

Spectroscopy results demonstrate that incorporation of a crystalline pre-oxidized c(4 × 2)–O layer into the Al₂O₃/GaAs(100) junction decreases the amount of interface defects.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C4CP05972G

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