Bismuth-containing c(4×4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations-Reference-Cited by-同舟云学术

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Bismuth-containing c(4×4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations

Published:2014-03 Issue: Volume:193 Page:34-38
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Laukkanen P.,Punkkinen M.P.J.,Lång J.J.K.,Sadowski J.,Kuzmin M.,Kokko K.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. OMVPE growth and characterization of Bi-containing III–V alloys

2. Band gap of GaAs1−xBix, 0

3. Effect of Bi surfactant on atomic ordering of GaAsSb

4. Giant Spin-Orbit Bowing inGaAs1−xBix

5. Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111);ACS Nano;2023-02-23

3. Surface Mediated Growth of Dilute Bismides;Bismuth-Containing Alloys and Nanostructures;2019

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