Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.26.803/fulltext
Reference24 articles.
1. Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction
2. Models of column III and V elements on GaAs (110): Application to MBE
3. Atomic Geometry of GaAs(110)-p(1×1)-Al
4. Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers
5. LEED-AES-TDS characterization of Sb overlayers on GaAs(110)
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