Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers-Reference-Cited by-同舟云学术

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Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers

Published:1981-09 Issue:3 Volume:19 Page:331-334
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Kahn A.,Carelli J.,Kanani D.,Duke C. B.,Paton A.,Brillson L.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571058

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal Surfaces;Materials Science and Technology;2006-09-15

2. References for 4.1;Landolt-Börnstein - Group III Condensed Matter;2002

3. Tables for 4.1;Landolt-Börnstein - Group III Condensed Matter;2002

4. Formation of the Al–GaSb(110) interface;Surface Science;1998-07

5. Chapter I Surface crystallography: The experimental data base;Cohesion and Structure;1995

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