Electronic structure of indium-tin-oxide films fabricated by reactive electron-beam deposition-Reference-Cited by-同舟云学术

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Electronic structure of indium-tin-oxide films fabricated by reactive electron-beam deposition

Published:2005-08-16 Issue:8 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Matino F.,Persano L.,Arima V.,Pisignano D.,Blyth R. I. R.,Cingolani R.,Rinaldi Ross

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.085437/fulltext

Reference35 articles.

1. Criteria for Choosing Transparent Conductors

2. Indium–tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance

3. Intrinsic limit of electrical properties of transparent conductive oxide films

4. Transparent and conducting ITO films: new developments and applications

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4. Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering;Materials Research Express;2023-10-01

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