Microscopic carbon distribution in Si1−yCyalloys: A Raman scattering study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.3648/fulltext
Reference14 articles.
1. On the feasibility of growing dilute CxSi1−xepitaxial alloys
2. Synthesis of Si1−yCyalloys by molecular beam epitaxy
3. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
4. Metastable SiGeC formation by solid phase epitaxy
5. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys
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2. Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing;Journal of Alloys and Compounds;2013-03
3. Raman and Fourier transform infrared study of substitutional carbon incorporation in rapid thermal chemical vapor deposited Si1−x−yGexCy on (1 0 0) Si;Journal of Applied Physics;2010-01-15
4. Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1−x−yGexCy on Si (1 0 0) using Raman spectroscopy;Thin Solid Films;2010-01
5. Theoretical Study of Boron Clustering in Silicon;Journal of Computational Electronics;2005-12
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