Raman and Fourier transform infrared study of substitutional carbon incorporation in rapid thermal chemical vapor deposited Si1−x−yGexCy on (1 0 0) Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3284937
Reference26 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys
3. Stability of strained Si1−yCy random alloy layers
4. In situmonitoring of strain relaxation during antimony‐mediated growth of Ge and Ge1−yCylayers on Si(001) using reflection high energy electron diffraction
5. Strain compensated heterostructures in the Si1−x−yGexCy ternary system
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