Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.195206/fulltext
Reference37 articles.
1. Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon
2. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
3. Transient Phosphorus Diffusion Below the Amorphization Threshold
4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
5. Implantation and transient B diffusion in Si: The source of the interstitials
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