Electron-paramagnetic-resonance measurements of Si-donor-related levels inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.5554/fulltext
Reference14 articles.
1. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
4. Evidence for large lattice relaxation at theDXcenter in Si-dopedAlxGa1−xAs
5. Characterization of theDXcenter in the indirectAlxGa1−xAsalloy
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