Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.15789/fulltext
Reference41 articles.
1. The role of impurities in refined ZnSe and other II–VI semiconductors
2. Achievement of low‐resistivityp‐type ZnSe and the role of twinning
3. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
4. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
5. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
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