n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
Author:
Affiliation:
1. Department of Physics
2. Chemistry and Biology (IFM)
3. Linköping University
4. SE 581 83 Linköping
5. Sweden
6. Department of Materials Science and Metallurgy
7. University of Cambridge
8. Cambridge
9. UK
Abstract
While increasing temperature is essential for reducing carbon and oxygen incorporation, it reduces the incorporation of silicon as a donor.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC02825J
Reference36 articles.
1. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
2. Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells
3. Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structures
4. Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
5. Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursors
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