Si1−xGexgrowth instabilities on vicinal Si(001) substrates: Kinetic vs. strain-induced effects
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.041301/fulltext
Reference25 articles.
1. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
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3. Infinite Lifshitz point in incommensurate type-I dielectrics
4. Step-Bunching Instability of Vicinal Surfaces under Stress
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