Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126410
Reference24 articles.
1. Physical limits of heterostructure field-effect transitors and possibilities of novel quantum field-effect devices
2. Transport and single-particle relaxation times of a deformed wavefunction in a back-gated GaAs-AlGaAs heterostructure
3. High-mobility modulation-doped SiGe-channel p-MOSFETs
4. Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures
5. Scattering mechanisms affecting hole transport in remote‐doped Si/SiGe heterostructures
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3. Low-temperature electrical characterization of the Ti–Si(100) interface at the p-Si/SiGe/Si–Ti structure using Hall measurement analysis;Physica Scripta;2013-07-03
4. Interfacial Al segregation limiting electron mobility at the inverted interface of AlGaAs/GaAs quantum well;Semiconductor Science and Technology;2012-08-06
5. Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si0.8Ge0.2p-Channel MOSFETs;Acta Physica Polonica A;2011-12
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