Transport and single-particle relaxation times of a deformed wavefunction in a back-gated GaAs-AlGaAs heterostructure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=5/a=022/pdf
Reference17 articles.
1. Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs Heterojunctions
2. Effect of impurity scattering on the distribution function in two-dimensional Fermi systems
3. Effect of Level Broadening on the Polarizability in a Two-Dimensional System
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2. Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure;Applied Physics Letters;2000-05
3. Single-particle and transport relaxation times in back-gated undoped AlGaAs/GaAs;Semiconductor Science and Technology;1996-08-01
4. Observation of the effect of electron-electron scattering on the impurity-limited resistivity of a two-dimensional electron gas;Physical Review B;1995-05-15
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