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Transport properties of a wide-quantum-well velocity modulation transistor structure

  • Published:1994-09-01 Issue:9 Volume:9 Page:1744-1747
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Kurobe A,Castleton I M,Linfield E H,Grimshaw M P,Brown K M,Ritchie D A,Jones G A C,Pepper M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum logic gates;Physics-Uspekhi;2018-11-30

2. Mobility modulation in inverted delta doped coupled double quantum well structure;Physica B: Condensed Matter;2016-10

3. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus;Physical Review Applied;2016-06-09

4. Velocity-Modulation Transistor;Complete Guide to Semiconductor Devices;2010-11-03

5. Layer interdependence of transport in an undoped electron-hole bilayer;Physical Review B;2008-09-23
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