High-energy channeling implants of phosphorus along the silicon [100] and [110] axes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.10568/fulltext
Reference32 articles.
1. Critical aspects of high energy implants for CMOS technology: Channeling effects and masking problems
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4. Deep implants by channeling implantation
5. Channeling implantation of B and P in silicon
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1. Non-invasive nano-imaging of ion implanted and activated copper in silicon;Journal of Applied Physics;2011-07-15
2. Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-04
3. Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC;Journal of Applied Physics;2003-01-15
4. Channeling implantations of Al+ into 6H silicon carbide;Applied Physics Letters;1999-06-28
5. Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling;Journal of Applied Physics;1998-04
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