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Deep implants by channeling implantation

Published:1989-02 Issue:1-3 Volume:2 Page:139-143
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schreutelkamp R.J.,Saris F.W.,Westendorp J.F.M.,Kaim R.E.,Odlum G.B.,Janssen K.T.F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Channeling of boron ions into silicon

2. Channeled‐ion implantation of group‐III and group‐V ions into silicon

3. Uniform doping of channeled‐ion implantation

4. Planar channeling effects in Si(100)

5. D. W. Berrian, R. E. Kaim, J. W. Vanderpot and J. F. M. Westendorp, The ASM-220 Medium Current Implanter, ASM Internal Rep.

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1. Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC;Semiconductor Science and Technology;2019-10-01

2. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation;Current Opinion in Solid State and Materials Science;2017-12

3. Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-04

4. Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon;Journal of The Electrochemical Society;1997-04-01

5. Influence of channeling effects on ion distribution and damage profiles during high energy ion implantation in Si;Mikrochimica Acta;1994-12

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