Planar channeling effects in Si(100)

Author:

Current Michael I.,Turner Norman L.,Smith T.C.,Crane Dave

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes;Microelectronic Engineering;2017-04

2. Critical angles and low-energy limits to ion channeling in silicon;Radiation Effects and Defects in Solids;1996-01

3. Ion beam techniques in microelectronics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05

4. Beam defocusing for channeling reduction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

5. Beam defocusing for channeling reduction;Ion Implantation Technology–92;1993

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