Author:
Lecrosnier D.,Paugam J.,Gallou J.
Subject
Physics and Astronomy (miscellaneous)
Cited by
14 articles.
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1. The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles;Japanese Journal of Applied Physics;2021-12-17
2. Fluorine-enhanced boron diffusion in germanium-preamorphized silicon;Journal of Applied Physics;2005-10
3. Axial channeling of boron ions into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
4. Channeling effects in high energy implantation of N+ in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
5. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08