Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2084336
Reference41 articles.
1. Effect of fluorine on the diffusion of boron in ion implanted Si
2. Boron diffusion in amorphous silicon and the role of fluorine
3. Enhanced Boron Diffusion in Amorphous Silicon
4. Channeling of boron ions into silicon
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1. The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing;Scientific Reports;2017-10-12
2. RF plasma treatment of shallow ion-implanted layers of germanium;Materials Science in Semiconductor Processing;2016-02
3. Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium;Electrochemical and Solid-State Letters;2009
4. On the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon;Journal of Applied Physics;2008-05-15
5. Impact of Fluorine co-implant on Boron Diffusion during Non-melt Laser Annealing;AIP Conference Proceedings;2006
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