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RF plasma treatment of shallow ion-implanted layers of germanium

  • Published:2016-02 Issue: Volume:42 Page:204-209
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Okholin P.N.,Glotov V.I.,Nazarov A.N.,Yuchymchuk V.O.,Kladko V.P.,Kryvyi S.B.,Lytvyn P.M.,Tiagulskyi S.I.,Lysenko V.S.,Shayesteh M.,Duffy R.

Funder

Science Foundation of Ireland

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Germanium-Based Technologies: From Materials to Device;Claeys,2007

2. R. Duffy, M. Shayesteh, in: Proceedings of the International Workshop on Junction Technology (IWJT), 2014, pp. 155–160.

3. Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

4. Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

5. Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF Plasma Monolayer Doping of Si Nanowires;2019 IEEE 9th International Conference Nanomaterials: Applications & Properties (NAP);2019-09

2. Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs;ECS Journal of Solid State Science and Technology;2019

3. Enhanced recrystallization and dopant activation of P+ion-implanted super-thin Ge layers by RF hydrogen plasma treatment;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09

4. (Invited) The (R)Evolution of the Junctionless Transistor;ECS Transactions;2016-05-04

5. Regrowth of Ge with different degrees of damage under thermal and athermal treatment;RSC Advances;2016
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