Self-implantation energy and dose effects on Ge solid-phase epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference47 articles.
1. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
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1. Multiscale modeling of doping processes in advanced semiconductor devices;Materials Science in Semiconductor Processing;2017-05
2. Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys;Journal of Applied Physics;2016-03-07
3. RF plasma treatment of shallow ion-implanted layers of germanium;Materials Science in Semiconductor Processing;2016-02
4. Regrowth of Ge with different degrees of damage under thermal and athermal treatment;RSC Advances;2016
5. Processing of germanium for integrated circuits;TURKISH JOURNAL OF PHYSICS;2014
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