Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116470
Reference12 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RF plasma treatment of shallow ion-implanted layers of germanium;Materials Science in Semiconductor Processing;2016-02
2. Damage removal and boron diffusion during solid phase epitaxial growth of SiGe alloy layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-04
3. Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Effects of BF2and B Implantation-Doping on Crystalline Degradation of Pseudomorphic Metastable Ge0.06Si0.94;Japanese Journal of Applied Physics;1998-12-30
5. Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications;Journal of Electronic Materials;1998-05
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