Damage removal and boron diffusion during solid phase epitaxial growth of SiGe alloy layers-Reference-Cited by-同舟云学术

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Damage removal and boron diffusion during solid phase epitaxial growth of SiGe alloy layers

Published:1999-04 Issue:1 Volume:152 Page:60-64
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zou L.-F.,Acosta-Ortiz S.E.,Zou LuXin,Luna R.E.,Perez-Herrera G.A.,Regalado L.E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

1. Advantage of rapid thermal annealing over furnace annealing for P‐implanted metastable Si/Ge0.12Si0.88

2. Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

3. Rapid thermal annealing of arsenic implanted Si1−xGex epilayers

4. Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy

5. Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization;Solid-State Electronics;2013-05

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