Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization-Reference-Cited by-同舟云学术

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Published:2013-05 Issue: Volume:83 Page:37-41
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ding Yinjie,Cheng Ran,Zhou Qian,Du Anyan,Daval Nicolas,Nguyen Bich-Yen,Yeo Yee-Chia

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Yu B, Ma Z.-J, Zhang G, Hu C. Hot-carrier effect in Ultra-Thin-Film (UTF) fully-depleted SOI MOSFET’s. In: 54th Annual Device Research Conference; 1996. p. 22.

2. Subramanian V, Kedzierski J, Lindes N, Tam H, Su Y, McHale J, Cao K, King V, Bokor J, Hu C. A bulk-si-compatible ultrathin-body SOI technology for sub-100nm MOSFETs. In: 57th Annual Device Research Conference; 1999. p. 28.

3. Ultra-thin body SOI MOSFET for deep-sub-tenth micron era;Choi;IEEE Int Electron Dev Meeting,1999

4. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel;Yeo;IEEE Electron Dev Lett,2000

5. Requirements for ultra-thin-film devices and new materials for the CMOS roadmap;Fenouillet-Beranger;Solid State Electronics,2004

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing;AIP Advances;2018-04

2. 3D strain measurement in electronic devices using through-focal annular dark-field imaging;Ultramicroscopy;2014-11

3. Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing;Applied Physics Express;2013-08-01