Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing-Reference-Cited by-同舟云学术

Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing

Published:2018-04 Issue:4 Volume:8 Page:045308
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wu Shujing¹,Miao Dongming¹,Dai Xianying¹,Shao Chenfeng²,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China

2. Department of Wireline Design, Zhongxing Telecommunication Equipment Corporation, Xi’an, Shaanxi 710114, China

Funder

111 Project

the Advance Research Foundation of China

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5024444

Reference27 articles.

1. Uniaxially strained silicon by wafer bonding and layer transfer

2. Uniaxial, tensile-strained Si devices

3. A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

4. SOI MOSFET with an insulator region (IR-SOI): A novel device for reliable nanoscale CMOS circuits

5. A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications

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1. Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films;Silicon;2024-05-30

2. Formation of Globally Uniaxial Strain in He+ Implanted Silicon-on-Insulator Wafers Based on the Size Effect of Internal Stress of Strip SiN Films;Silicon;2023-11-23

3. The Strain Model for Globally Strained Silicon on Insulator Wafer Based on High-stress SiN Film Deposition;Silicon;2023-03-24