Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120912
Reference12 articles.
1. Advantage of rapid thermal annealing over furnace annealing for P‐implanted metastable Si/Ge0.12Si0.88
2. Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing
3. Rapid thermal annealing of arsenic‐implanted Si0.6Ge0.4 alloys: Temperature effects
4. Rapid thermal annealing of arsenic implanted Si1−xGex epilayers
5. Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation
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1. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
2. An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers;Solid-State Electronics;2006-07
3. Fabrication technology of SiGe hetero-structures and their properties;Surface Science Reports;2005-11
4. Formation of thin SiGe virtual substrates by ion implantation into Si substrates;Applied Surface Science;2004-03
5. Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates;Japanese Journal of Applied Physics;2003-07-01
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