Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102904
Reference20 articles.
1. GexSi1−xstrained‐layer heterostructure bipolar transistors
2. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
3. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
4. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
5. n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors
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1. Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation;Journal of Crystal Growth;2017-11
2. Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates;Materials Science in Semiconductor Processing;2017-11
3. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si 1−x C x heterostructures using the defect control by ion implantation technique;Journal of Crystal Growth;2017-06
4. Compressively strained Si/Si1−xCxheterostructures formed on Ar ion implanted Si(100) substrates;Japanese Journal of Applied Physics;2016-02-01
5. Heteroepitaxial Growth of Si, Si1−xGex-, and Ge-Based Alloy;Handbook of Crystal Growth;2015
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