Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Published:1988-04 Issue:4 Volume:9 Page:165-167
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Patton G.L.,Iyer S.S.,Delage S.L.,Tiwari S.,Stork J.M.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/45/00000677.pdf?arnumber=677

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